PRESS RELEASE

Sept. 25, 2008

 

Peak Pairs Analysis (PPA) for DigitalMicrograph

 

Higashimatsuyama, Saitama, Japan (Sept. 25, 2008): HREM Research Inc. introduced PPA (Peak Pairs Analysis) at the recent M&M2008 in Albuquerque, USA and EMC2008 in Aachen, Germany. PPA makes possible strain mapping analysis and high-resolution peak measurement from HREM images using Gatanfs DigitalMicrograph.

 

PPA is based on Peak Pairs algorithm recently developed by Pedro L. Galindo of University of Cadiz. It features high-resolution peak detection, image filtering, displacement and strain map calculation, atomic column and/or continuous strain maps, histogram and lattice pointfs analysis and geometric distortion determination and correction.

 

"Recent advances in digital imaging have offered the possibility of locally determining the elastic strain of materials from HRTEM images very precisely," said Dr. Kazuo Ishizuka, President of HREM Research Inc. "PPA is the second plug-in for DigitalMicrograph to measure the elastic strain following GPA (Geometrical Phase Analysis). We consider that both approaches are useful for strain determination, each having different properties, advantages and pitfalls, and should be considered as complementary tools in strain mapping."


About HREM Research Inc.

Founded in 2001, HREM Research Inc. specializes in developing products and services that enhance High-Resolution Electron Microscopy (HREM). Dr. Kazuo Ishizuka, the founder of a company has established the whole technique for HREM image simulation. Thus, a company's flagship product, Mac/WinHREM, is a world leading HREM image simulation software. Currently, HREM Research Inc. is actively working on making useful techniques to be available for the HREM community. For more information, visit http://www.hremresearch.com or contact support@hremresearch.com.

 

Contact:

Kazuo Ishizuka

HREM Research Inc.

14-48 Matsukazedai, Higashimatsuyama

355-0055 JAPAN

 

Supplementary materials

Fig 1. Original HRTEM image: an InAs/GaAs (001) interface.

Fig 2. One of the strain tensor showing a misfit dislocation network at the InAs/GaAs interface.